Datasheet Summary
2N5684 (PNP), 2N5686 (NPN)
High-Current plementary Silicon Power Transistors
These packages are designed for use in high-power amplifier and switching circuit applications.
Features
- ăHigh Current Capability
- IC Continuous = 50 Amperes
- ăDC Current Gain
- hFE = 15ā-ā60 @ IC = 25 Adc
- ăLow Collector-Emitter Saturation Voltage
- ąVCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc
- ăPb-Free Packages are Available-
MAXIMUM RATINGS (Note 1)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
- Continuous Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C
Symbol VCEO VCB VEB
IC IB PD
Value 80 80 5.0 50 15 300
Unit Vdc Vdc Vdc Adc...
