Microsemi 2N5684
NPN POWER SILICON TRANSISTOR
| Part No. | 2N5684 |
|---|---|
| Datasheet | 2N5684 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol 2N5683 2N5684 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation (1) @ TC = 250C @ TC = 1000C VCEO VCBO VEBO IB IC PT 60 80 60 80 5.0 15 50 300 171 Operating & Storage Junction Temperature Range TJ, Tstg THERMAL CHARACTERISTICS -65 to +200 Characteristics Symbol Max. Thermal Resistance, Junction-to-Case RθJC 0.584 1) Derate linearly 1.715 W/0C between TC = +250C and TC = +2000CELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc 2N5683 2N5684 V(BR)CEO Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 40 Vdc Collector-Emitter Cutoff Current 2N5683 2N5684 ICEO VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Colle