Inchange Semiconductor 2N5684
Silicon PNP Power Transistors
| Part No. | 2N5684 |
|---|---|
| Datasheet | 2N5684 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistors |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain-hFE=15~60@IC = -25A●Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A
APPLICATIONS
●Designed for use in high power amplifer and switching circuits applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -15 A PC Collector Power Dissipation @TC=25℃ -300 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.584 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5684ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise