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2N5683, 2N5684
PNP High Power Silicon Transistor
Features
• Available in JAN, JANTX, JANTXV per MIL-PRF-19500/466 • TO-3 (TO-204AA) Package • Designed for Use in High Power Amplifier and Switching Circuit
Applications
Rev. V2
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Max.
Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current
IC = 200 mA dc, 2N5683 IC = 200 mA dc, 2N5684
VCB = -60 Vdc, 2N5683 VCB = -80 Vdc, 2N5684
V(BR)CEO V dc
-60 -80
—
ICBO µA dc
—
-5.0
Emitter - Base Cutoff Current
VEB = -5 Vdc, IC = 0
IEBO µA dc
—
-5.0
Collector - Emitter Cutoff Current
VCE = -60 V dc, VBE = +1.5 V dc, 2N5683 VCE = -80 V dc, VBE = +1.5 V dc, 2N5684
ICEX1
µA dc
—
-5.