VPT 2N5682
NPN Power Silicon Transistor
2N5682 Specifications
- Package : TO-39
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 1A
- Collector Base Voltage : 120V
- Emitter Base Voltage : 4V
- Max Power Dissipation : 1W
- Max Operating Temp : 200°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | 2N5682 |
|---|---|
| Datasheet | 2N5682 Download |
| Manufacturer |  VPT |
| Description | NPN Power Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/583● TO-39 (TO-205AD) Package
● Ideal for General Purpose High Voltage Amplifier and Switching
APPLICATIONS
Rev. V3ELECTRICAL CHARACTERISTICS
(TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current IC = 10 mA dc, 2N5681 IC = 10 mA dc, 2N5682 V(BR)CEO V dc 100 120 VCE = 70 V dc, 2N5681 VCE = 80 V dc, 2N5682 ICEO µA dc — VCE = 100 V dc, VBE = 1.5 V dc, 2N5681 VCE = 120 V dc, VBE = 1.5 V dc, 2N5682 ICEX1 nA dc — VCB = 100 V dc, 2N5681 VCB =120 V dc, 2N5682 ICBO nA dc — VEB = 4.0 Vdc IEBO µA dc — Max. — 10 100 100 1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage IC = 250 mA dc, VCE = 2 V dc IC = 500 mA dc, VCE = 2 V dc IC = 1 A dc, VCE = 2 V dc 40 150 hFE - 20 5 IC = 250 mA dc, IB = 25 mA dc IC = 500 mA dc, IB...
