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2N5681 & 2N5682
NPN Power Silicon Transistor
Features
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/583 • TO-39 (TO-205AD) Package • Ideal for General Purpose High Voltage Amplifier and Switching
Applications
Rev. V3
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Emitter - Base Cutoff Current
IC = 10 mA dc, 2N5681 IC = 10 mA dc, 2N5682
V(BR)CEO V dc
100 120
VCE = 70 V dc, 2N5681 VCE = 80 V dc, 2N5682
ICEO µA dc
—
VCE = 100 V dc, VBE = 1.5 V dc, 2N5681 VCE = 120 V dc, VBE = 1.