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Inchange Semiconductor

2N6051 Datasheet Preview

2N6051 Datasheet

Silicon PNP Power Transistors

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INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6051
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = -6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= -80V(Min)
·Complement to type 2N6058
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-80 V
VCEO Collector-Emitter Voltage
-80 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current -Continuous
-12 A
ICM Collector Current-Peak
-20 A
IB Base Current
-0.2 A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c ThermalResistance, Junction to Case
MAX
1.17
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2N6051 Datasheet Preview

2N6051 Datasheet

Silicon PNP Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Darlingtion Power Transistor
isc Product Specification
2N6051
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0
-80 V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A; IB= -24mA
-2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -12A; IB= -120mA
-3.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -12A; IB= -120mA
4.0 V
VBE(on) Base-Emitter On voltage
IC= -6A; VCE= -3V
-2.8 V
ICEO Collector Cutoff current
ICEX Collector Cutoff current
IEBO Emitter Cut-off current
VCE= -40V; IB=0
VCE= -80V; VBE(off)= -1.5V
VCE= -80V; VBE(off)= -1.5V,TC=150
VEB= -5V; IC= 0
-1.0 mA
-0.5
-5.0
mA
-2.0 mA
hFE-1
DC Current Gain
IC= -6A; VCE= -3V
750 18000
hFE-2
DC Current Gain
IC= -12A; VCE= -3V
100
COB Output Capacitance
IE=0; VCB= -10V; ftest= 0.1MHz
500 pF
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N6051
Description Silicon PNP Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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