INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
isc Product Specification
2N6057
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 120mA
VBE(on) Base-Emitter On voltage
IC= 6A ; VCE= 3V
ICEO Collector Cutoff current
ICEX Collector Cutoff current
IEBO Emitter Cut-off current
VCE= 30V; IB= 0
VCE= 60V;VBE(off)= -1.5V
VCE= 60V;VBE(off)= -1.5V,TC=150℃
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 6A ; VCE= 3V
hFE-2
DC Current Gain
IC= 12A ; VCE= 3V
COB Output Capacitance
IE=0 ; VCB= 10V;ftest= 0.1MHz
MIN MAX UNIT
60 V
2.0 V
3.0 V
4.0 V
2.8 V
1.0 mA
0.5
5.0
mA
2.0 mA
750 18000
100
300 pF
isc website：www.iscsemi.com
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