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Inchange Semiconductor

2N6057 Datasheet Preview

2N6057 Datasheet

Silicon NPN Power Transistors

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlingtion Power Transistor
2N6057
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·High DC current gain-
hFE = 750 (Min) @ IC = 6A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·Complement to type 2N6050
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60 V
VCEO Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous
12 A
ICM Collector Current-Peak
20 A
IB Base Current
0.2 A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
150
Tstg Storage Temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
1.17
UNIT
/W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2N6057 Datasheet Preview

2N6057 Datasheet

Silicon NPN Power Transistors

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlingtion Power Transistor
isc Product Specification
2N6057
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 12A; IB= 120mA
VBE(on) Base-Emitter On voltage
IC= 6A ; VCE= 3V
ICEO Collector Cutoff current
ICEX Collector Cutoff current
IEBO Emitter Cut-off current
VCE= 30V; IB= 0
VCE= 60V;VBE(off)= -1.5V
VCE= 60V;VBE(off)= -1.5V,TC=150
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 6A ; VCE= 3V
hFE-2
DC Current Gain
IC= 12A ; VCE= 3V
COB Output Capacitance
IE=0 ; VCB= 10V;ftest= 0.1MHz
MIN MAX UNIT
60 V
2.0 V
3.0 V
4.0 V
2.8 V
1.0 mA
0.5
5.0
mA
2.0 mA
750 18000
100
300 pF
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2N6057
Description Silicon NPN Power Transistors
Maker Inchange Semiconductor
Total Page 2 Pages
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