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2N6099 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

Download the 2N6099 datasheet PDF. This datasheet also includes the 2N6101 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (2N6101_InchangeSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

¡¤With TO-220 package ¡¤High current capability APPLICATIONS ¡¤For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER 2N6098 2N6099 VCBO Collector-base voltage 2N6100 2N6101 2N6098 2N6099 VCEO Collector-emitter voltage 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25¡æ Open collector Open base 80 80 8 10 75 150 -65~150 ¡æ ¡æ V A W Open emitter 80 80 70 70 V CONDITIONS VALUE 70 70 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N6098 2N6099 VCEO(SUS) Collector-emitter sustaining voltage 2N6100 2N6101 VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage 2N6098/6099 VBE Base-emitter on voltage 2N6100/6101 ICBO IEBO Collector cut-off current Emitter cut-off current 2N6098/6099 hFE DC current gain 2N6100/6101 fT Transition frequency 2N6098 2N6099 2N6100 2N6101 SYMBOL CONDITIONS MIN 70 70 TYP.

MAX UNIT IC=0.1A ;IB=0 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ;

VCE=4V 1.3 IC=5A ;

Overview

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100.