• Part: 2N6099
  • Description: Silicon Power Transistor
  • Category: Transistor
  • Manufacturer: SavantIC
  • Size: 120.32 KB
Download 2N6099 Datasheet PDF
SavantIC
2N6099
2N6099 is Silicon Power Transistor manufactured by SavantIC.
- Part of the 2N6098 comparator family.
DESCRIPTION - With TO-220 package - High current capability APPLICATIONS - For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2N6098 VCBO Collector-base voltage 2N6099 2N6100 2N6101 2N6098 VCEO Collector-emitter voltage 2N6099 2N6100 2N6101 VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 70 70 80 80 70 70 80 80 8 10 75 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT /W Savant IC Semiconductor .. Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6098 2N6099 2N6098 2N6099 2N6100 2N6101 SYMBOL CONDITIONS MIN 70 70 TYP. UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 2N6100 2N6101 80 80 IC=5A;IB=0.5A IC=10A;IB=2.5A IC=4A ; VCE=4V 1.3 2N6100/6101 IC=5A ; VCE=4V VCB=Rated VCBO;IE=0 TC=150 VEB=8V; IC=0 2N6098/6099 IC=4A ; VCE=4V 20 2N6100/6101 IC=5A ; VCE=4V IC=1A ; VCE=10V 0.8 80 0.5 2.0 1.0 1.3 3.5 VCEsat-1 VCEsat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage 2N6098/6099 Base-emitter on voltage ICBO IEBO Collector cut-off current Emitter cut-off current m A m A h FE DC current gain f T Transition frequency MHz Savant IC Semiconductor .....