Unisonic Technologies 2N6099
COMPLEMENTARY SILICON TRANSISTORS
| Part No. | 2N6099 |
|---|---|
| Datasheet | 2N6099 Download |
| Manufacturer |  Unisonic Technologies |
| Description | COMPLEMENTARY SILICON TRANSISTORS |
| Buy | Stock & Price |
FEATURES
*High safe operating area(100 tested) 150W and 100V *Complement Characterized for linear operation *High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) *For Low Distortion Complementary Designs TO-3ABSOLUTE MAXIMUM RATINGS
(Ta=25°C, unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-emitter voltage Total Power dissipation Tc=25°C Dertate above 25°C Collector current continuous Peak Base current continuous Peak Thermal resistance Junction to Case Storage Temperature SYMBOL VCBO VCEO VEBO VCEX Pc VALUE 160 140 7 160 150 0.855 UNITS V V V V W W/°C A A A A °C/W °C Ic 16 30 IB 4 15 1.17 -65 ~ +200 RθJC TSTG UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R205-001,A UTC 2N3773/2N6099 PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off...
