2N6099 Datasheet | Unisonic Technologies

FEATURES - High safe operating area(100 tested) 150W and 100V - plement Characterized for linear operation - High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) - For Low Distortion plementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-emitter voltage Total Power dissipation Tc=25°C Dertate above 25°C Collector current continuous Peak Base current continuous Peak Thermal resistance Junction to Case Storage Temperature SYMBOL VCBO VCEO VEBO VCEX .. Pc VALUE 160 140 7 160 150 0.855 UNITS V V V V W W/°C A A A A °C/W °C Ic 16 30 IB 4 15 1.17 -65 ~ +200 RθJC TSTG UNISONIC TECHNOLOGIES CO. LTD QW-R205-001,A UTC 2N3773/2N6099 PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector Cut-off Current Emitter Cut-off Current Collector Cut-off Current P O W E R TRANSISTOR SYMBOL BVCBO BVCEX BVCER ICBO IEBO ICEX ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) TEST CONDITIONS Ic=0.2A,Ib=0 Ic=0.1A,Vbe(OFF)=1.5V Rbe=100Ω Ic=0.1A Rbe=100Ω VCB=140V,IE=0 VBE=7V,Ic=0 VCE=140V,VBE(off)=1.5V VCE=140V,VBE(off)=1.5V ,Tc=150°C VCE=4V,Ic=8A VCE=4V,Ic=16A Ic=8A,IB=800m A Ic=16A,IB=3.2A Ic=8A, VCE=4V Ic=1A,VCE=4V,f=1k Hz Ic=1A,f=50k Hz 140 160 150 UNIT 2 5 2 10 15 5 60 1.4 4 2.2 40 4 m A m A m A m A OFF CHARACTERISTICS DC current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage DYNAMIC CHARACTERISTICS Small Signal Current Gain Magnitade of mom-Emitter small signal,short circuit forward current transfer ratio Second breakdown collector with base forward biased h FE1 h FE2 VCE(sat) VBE(on) h FE |h FE| Is/b t=1s(non-repetive),VCE=100V...