Datasheet Details
| Part number | 2N6582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.76 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N6582 Download (PDF) |
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| Part number | 2N6582 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 187.76 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2N6582 Download (PDF) |
|
|
|
·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W 2N6582 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2N6582 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 MIN TYP 350 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A;
isc Silicon NPN Power Transistor.
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