2N6581 Overview
·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark.
2N6581 datasheet by Inchange Semiconductor.
| Part number | 2N6581 |
|---|---|
| Datasheet | 2N6581-InchangeSemiconductor.pdf |
| File Size | 136.35 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2N6581 | Bipolar NPN Device | Seme LAB |
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