2N6581 Description
·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark.
2N6581 is Silicon NPN Power Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
2N6581 | Bipolar NPN Device |
·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : 1 isc & iscsemi is registered trademark.