Datasheet Details
| Part number | 2N6581 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 136.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6581-InchangeSemiconductor.pdf |
|
|
Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | 2N6581 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 136.35 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2N6581-InchangeSemiconductor.pdf |
|
|
|
·Excellent Safe Operating Area ·High Voltage,High Speed ·Low Saturation Voltage ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) APPLICATIONS ·Off-line power supplies ·Switching amplifiers ·Inverters/Converters ·Motor speed control circuits ·Switching regulator ·Solenoid& relay drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 550 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9.0 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N6581 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N6580 | Silicon NPN Power Transistor |
| 2N6582 | Silicon NPN Power Transistor |
| 2N6583 | Silicon NPN Power Transistor |
| 2N6584 | Silicon NPN Power Transistor |
| 2N65 | N-Channel MOSFET Transistor |
| 2N6544 | Silicon NPN Power Transistor |
| 2N6545 | Silicon NPN Power Transistor |
| 2N6574 | Silicon NPN Power Transistor |
| 2N6594 | Silicon PNP Power Transistors |
| 2N6040 | Silicon PNP Power Transistors |