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Inchange Semiconductor
2N6582
DESCRIPTION - Excellent Safe Operating Area - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) - High Current Capability - Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for linear amplifiers, series pass regulators, and inductive switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation@TC=25℃ 125 Junction Temperature ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER...