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2N6584 - Silicon NPN Power Transistor

General Description

Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Current Capability Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

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isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Current Capability ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5 V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for linear amplifiers, series pass regulators, and inductive switching applications.