Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A
VBE Base-emitter on voltage
IC=-4A ; VCE=-2V
ICBO Collector cut-off current
VCB=-35V; IE=0
IEBO Emitter cut-off current
VEB=-6V; IC=0
hFE-1
DC current gain
IC=-500mA ; VCE=-2V
hFE-2
DC current gain
IC=-4A ; VCE=-2V
Cob Output capacitance
IE=0 ; VCB=-10V f=1MHz
fT Transition frequency
IC=-500mA ; VCE=-2V
Product Specification
2SA1120
MIN TYP. MAX UNIT
-35 V
-1.0 V
-1.5 V
-0.1 mA
-0.1 mA
200
70
62 pF
170 MHz
2
