Datasheet Details
| Part number | 2SA1120 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.64 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1120 Download (PDF) |
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| Part number | 2SA1120 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.64 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1120 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -20V (Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= 0.1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobo flash applications ·Audio power amplifer applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IE Emitter Current-Continuous 5 A IEM Emitter Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
isc Silicon PNP Power Transistor 2SA1120.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1120 | Silicon PNP Transistor | Toshiba |
 |
2SA1120 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1125 | POWER TRANSISTOR |
| 2SA1129 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |