Datasheet4U Logo Datasheet4U.com

2SA1771 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for high current switching applications.

📥 Download Datasheet

Full PDF Text Transcription for 2SA1771 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SA1771. For precise diagrams, and layout, please refer to the original PDF.

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6...

View more extracted text
Min) ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@ IC= -6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -14 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -1.2 A 30 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1771 isc website: www.iscsemi.