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2SA755 Datasheet Preview

2SA755 Datasheet

POWER TRANSISTOR

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isc Silicon PNP Power Transistor
2SA755
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -50V(Min)
·Low Collector Saturation Voltage-
: VCE(sat)= -1.3V(Max.) @ IC= -1.5A
·Good Linearity of hFE
·Complement to Type 2SC1419
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO Collector-Emitter Voltage
-50
V
VEBO
Emitter-Base Voltage
-4
V
IC
Collector Current-Continuous
-2
A
PC
Total Power Dissipation@ TC=25
20
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SA755 Datasheet Preview

2SA755 Datasheet

POWER TRANSISTOR

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE=
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A
VBE(on) Collector-Emitter On Voltage
IC= -1A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -20V; IE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -0.1A; VCE= -4V
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -4V
hFE-1 Classifications
A
B
C
35-70 50-120 100-200
2SA755
MIN TYP. MAX UNIT
-50
V
-50
V
-4
V
-1.3
V
-1.5
V
-100 μA
35
200
35
50
MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 2SA755
Description POWER TRANSISTOR
Maker Inchange Semiconductor
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2SA755 Datasheet PDF






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