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2SB1184 - Silicon PNP Power Transistor

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Description

Low VCE(sat) Small and slim package Complements the 2SD1760/2SD1864 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Co

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Datasheet Details

Part number 2SB1184
Manufacturer Inchange Semiconductor
File Size 240.38 KB
Description Silicon PNP Power Transistor
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isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1184 DESCRIPTION ·Low VCE(sat) ·Small and slim package ·Complements the 2SD1760/2SD1864 ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3 A 1.0 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.
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