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2SB940 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

¡¤With TO-220Fa package ¡¤Complement to type 2SD1264/1264A ¡¤High collector to emitter voltage V CEO ¡¤Large collector power dissipation P C APPLICATIONS ¡¤For power amplification ¡¤For TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector Base ¡¤ Absolute maximum ratings(Ta=25¡æ ) SYMBOL PARAMETER 2SB940 VCBO Collector-base voltage 2SB940A 2SB940 VCEO Collector-emitter voltage 2SB940A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25¡æ PC Collector power dissipation TC=25¡æ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ¡æ ¡æ Open collector Open base -180 -6 -2 -3 2 W V A A Open emitter -200 -150 V CONDITIONS VALUE -200 V UNIT Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2SB940 V(BR)CEO Collector-emitter breakdown voltage 2SB940A V(BR)CBO V(BR)EBO VCEsat VBE IEBO ICBO hFE-1 hFE-2 fT Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Emitter cut-off current Collector cut-off current DC current gain DC current gain Transition frequency IC=-50¦Ì IC=-500¦Ì A ,IE=0 A ,IC=0 IC=-5mA ,IB=0 CONDITIONS 2SB940,2SB940A SYMBOL MIN -150 TYP.

MAX UNIT V -180 -200 -6 -1.0 -1.0 -50 -50 60 50 30 MHz 240 ¦Ì ¦Ì V V V V A A IC=-0.5A, IB=-50mA IC=-0.4A ;

VCE=-10V VEB=-4V;

Overview

Inchange Semiconductor Product Specification Silicon PNP Power Transistors.