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2SB950A Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

General Description

·High DC Current Gain- : hFE= 2000(Min.)@IC= -3A ·High Speed Switching ·Complement to Type 2SD1276A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -8 A 2 W 40 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB950A isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor 2SB950A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A;

Overview

isc Silicon PNP Darlington Power Transistor.