2SB950A Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor .
High DC Current Gain- : hFE= 2000(Min. High Speed Switching. Complement to Type 2SD1276A. Minimum Lot-to-Lot variations for.

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Datasheet Specifications

Part number: 2SB950A
Manufacturer: Inchange Semiconductor
File Size: 219.12 KB
Datasheet: 2SB950A_InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector C

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2SB950A Silicon PNP Power Transistor Inchange Semiconductor

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