Datasheet Details
| Part number | 2SC3709 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.66 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC3709 Download (PDF) |
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| Part number | 2SC3709 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.66 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SC3709 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage- : VCE(sat)= 0.4V(Max)@IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1451 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3709 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3709A | NPN Transistor | INCHANGE |
 |
2SC3709A | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| 2SC3710A | Silicon NPN Power Transistor |
| 2SC3714 | Silicon NPN Transistor |
| 2SC3719 | Power Transistor |
| 2SC3720 | Power Transistor |
| 2SC3729 | Power Transistor |
| 2SC3737 | Power Transistor |
| 2SC3738 | Silicon NPN Transistor |
| 2SC3754 | Silicon NPN Power Transistor |
| 2SC3783 | Silicon NPN Power Transistor |
| 2SC3789 | Silicon NPN Transistor |