Datasheet Details
| Part number | 2SC3871 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.70 KB |
| Description | Power Transistor |
| Download | 2SC3871 Download (PDF) |
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| Part number | 2SC3871 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.70 KB |
| Description | Power Transistor |
| Download | 2SC3871 Download (PDF) |
|
|
|
·Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 2 W 45 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3871 · isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3871 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
isc Silicon NPN Power Transistor.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3871 | Silicon NPN Transistor | Panasonic Semiconductor |
| Part Number | Description |
|---|---|
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