Datasheet Details
| Part number | 2SC3885 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.03 KB |
| Description | Power Transistor |
| Download | 2SC3885 Download (PDF) |
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| Part number | 2SC3885 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.03 KB |
| Description | Power Transistor |
| Download | 2SC3885 Download (PDF) |
|
|
|
·High Breakdown Voltage : VCBO= 1400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display.
·High speed switching regulator output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1400 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 7 A ICM Collector Current- Peak 14 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3.5 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3885 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;
isc Silicon NPN Power Transistor.
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| 2SC3883 | Silicon NPN Power Transistor |
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| 2SC3841 | Silicon NPN Transistor |
| 2SC3852A | Silicon NPN Power Transistor |
| 2SC3856-P | Silicon NPN Transistor |
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| 2SC3866 | Silicon NPN Power Transistors |
| 2SC3871 | Power Transistor |