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2SC4806 Datasheet Preview

2SC4806 Datasheet

Silicon NPN Power Transistor

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isc Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1700V(Min)
·High Switching Speed
·Low Saturation Voltage
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Horizontal deflection output for high resolution display.
·High speed switching power supply output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1700
V
VCEO
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
2.5
A
50
W
150
Tstg
Storage Temperature Range
-55~150
INCHANGE Semiconductor
2SC4806
isc Websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




Inchange Semiconductor

2SC4806 Datasheet Preview

2SC4806 Datasheet

Silicon NPN Power Transistor

No Preview Available !

isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC4806
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3.5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 1700V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5.0
V
1.5
V
1.0 mA
10 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
8
hFE-2
DC Current Gain
IC= 3.5A; VCE= 5V
3.5
7.5
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 10V
3
MHz
COB
Output Capacitance
Switching Times; Resistive Load
IE= 0; VCB= 10V; ftest= 1.0MHz
240
pF
tstg
Storage Time
tf
Fall Time
IC= 3.5A; IB1= 0.7A; IB2= -1.4A;
RL= 56Ω
3.0 μs
0.2 μs
isc Websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number 2SC4806
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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