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2SC898 Datasheet - Inchange Semiconductor

2SC898 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage: V(BR)CEO= 150V (Min) *Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.)@ IC= 6A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(.

2SC898_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SC898

Manufacturer:

Inchange Semiconductor

File Size:

185.75 KB

Description:

Silicon npn power transistor.

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2SC898 2SC898 Silicon NPN Power Transistor Inchange Semiconductor

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