Datasheet Details
| Part number | 2SD1709 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.00 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1709 Download (PDF) |
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| Part number | 2SD1709 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 215.00 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD1709 Download (PDF) |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output ·Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A;
IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A;
isc Silicon NPN Power Transistor 2SD1709.
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|---|---|
| 2SD1706 | Silicon NPN Power Transistor |
| 2SD1711 | Silicon NPN Power Transistors |
| 2SD1713 | Power Transistor |
| 2SD1714 | Power Transistor |
| 2SD1716 | Power Transistor |
| 2SD1720 | Power Transistor |
| 2SD1727 | Power Transistor |
| 2SD1728 | Power Transistor |
| 2SD1730 | Power Transistor |
| 2SD1731 | Power Transistor |