Datasheet Details
| Part number | 2SD1716 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.74 KB |
| Description | Power Transistor |
| Download | 2SD1716 Download (PDF) |
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| Part number | 2SD1716 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.74 KB |
| Description | Power Transistor |
| Download | 2SD1716 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1161 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 120 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1716 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VBE(on) Base -Emitter On Voltage IC= 8A;
isc Silicon NPN Power Transistor 2SD1716.
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| 2SD1731 | Power Transistor |