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2SD1758 - Silicon NPN Power Transistor

General Description

Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A Complement to Type 2SB1182 Good Linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS DC/DC converter,relay drivers,lamp dri

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1758 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Typ)@ IC= 2A ·Complement to Type 2SB1182 ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM PC TJ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation Junction Temperature 40 V 32 V 5 V 2 A 2.5 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.