Datasheet4U Logo Datasheet4U.com

2SD2110 Datasheet - Inchange Semiconductor

Power Transistor

2SD2110 General Description

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 2A *High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS <.

2SD2110 Datasheet (198.39 KB)

Preview of 2SD2110 PDF

Datasheet Details

Part number:

2SD2110

Manufacturer:

Inchange Semiconductor

File Size:

198.39 KB

Description:

Power transistor.

📁 Related Datasheet

2SD211 SILICON POWER TRANSISTOR (SavantIC)

2SD211 NPN Transistor (INCHANGE)

2SD2111 Silicon NPN Transistor (Hitachi Semiconductor)

2SD2111 NPN Transistor (INCHANGE)

2SD2112 Power Transistor (Inchange Semiconductor)

2SD2113 Power Transistor (Inchange Semiconductor)

2SD2114 NPN Transistor (JCST)

2SD2114 NPN Transistor (SeCoS)

2SD2114K High-current Gain Medium Power Transistor (Rohm)

2SD2114K Power Transistor (Kexin)

TAGS

2SD2110 Power Transistor Inchange Semiconductor

Image Gallery

2SD2110 Datasheet Preview Page 2

2SD2110 Distributor