| Part number | 2SD2118 |
|---|---|
| Datasheet | 2SD2118-InchangeSemiconductor.pdf |
| File Size | 227.91 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD2118 | NPN Transistor | JCST |
 |
2SD2118 | Low Power Transistor | GME |
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2SD2118 | Transistor | Rohm |
 |
2SD2118 | NPN Transistor | SeCoS |
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2SD2118 | Transistor | Kexin |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2110 | Power Transistor |
| 2SD2112 | Power Transistor |
| 2SD2113 | Power Transistor |
| 2SD2102 | Silicon NPN Power Transistor |
| 2SD2128 | Power Transistor |
| 2SD2140 | Power Transistor |
| 2SD2161 | Silicon NPN Power Transistor |
| 2SD2165 | Silicon NPN Power Transistor |
| 2SD218 | Silicon NPN Power Transistor |
| 2SD2027 | Power Transistor |
