Datasheet Details
| Part number | 2SD2118 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.91 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2118-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118.
| Part number | 2SD2118 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 227.91 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD2118-InchangeSemiconductor.pdf |
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·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 4A;
IB= 100mA V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA;
IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2118 | NPN Transistor | JCST |
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2SD2118 | Low Power Transistor | GME |
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2SD2118 | Transistor | Rohm |
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2SD2118 | NPN Transistor | SeCoS |
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2SD2118 | Transistor | Kexin |
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