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2SD2118 - Transistor

Key Features

  • Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +1.50 0.15 -0.15 + 0 .1 55 .5 5 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse).
  • Collector power dissipation Junction.

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SMD Type Transistors Low VCE(sat) Transistor 2SD2118 Features Low VCE(sat). Excellent DC current gain characteristics. NPN silicon transistor. +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30+0.1 -0.1 0.50+0.8 -0.7 Unit: mm +1.50 0.15 -0.15 + 0 .1 55 .5 5 -0.15 0.80+0.1 -0.1 0.127 max 3.80 +02.65 .25 -0.1 +00.50 .15 -0.15 +01.50 .28 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature TC = 25 * Pw=10ms.