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2SD2118 Datasheet PDF

JCST 2SD2118

NPN Transistor

Part No. 2SD2118
Datasheet 2SD2118 Download
Manufacturer
JCST
Description NPN Transistor
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2SD2118 datasheet page 1 preview

FEATURES

z Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) z Excellent DC Current Gain Characteristics. TO-251-3L 1.BASE

MAXIMUM RATINGS

(Ta=25℃ unless otherwise noted) 2.COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 20 6 5 1 150 -55-150 Unit V V V A W ℃ ℃ 3.EMITTER

ELECTRICAL CHARACTERISTICS

(Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test conditions V(BR)CBO IC=50µA,IE=0 V(BR)CEO IC =1mA,IB=0