Transys 2SD2118
NPN Transistor
| Part No. | 2SD2118 |
|---|---|
| Datasheet | 2SD2118 Download |
| Manufacturer |  Transys |
| Description | NPN Transistor |
| Buy | Stock & Price |
FEATURES
Power dissipation PCM: 1 W (Tamb=25℃) Collector current ICM: 5 Collector-base voltage A V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ TO-252-2 6. 50¡ À0. 15 5. 30¡ À0. 10 0. 51¡ À0. 05 2. 30¡ À0. 10 5. 50¡ 0À. 10 9. 70¡ 0À. 20 0. 75¡ 0À. 10 1. 20 0. 51¡ À0. 10 0¡ 0«. 10 5¡ ã 5¡ ã 5¡ ã 1. BASE 2. 30¡ À0. 10 0. 80¡ À0. 10 0. 60¡ À0. 10 2. 30¡ À0. 10 0¡¡ ã«9¡ ã 0. 51 1. 60¡ 0À. 15 2. COLLECTOR 123 0. 6 2. 70¡ 0À. 20 3. EMITTERELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test conditions Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=2V, IC=500mA IC=4A, IB=100mA VCE=6V, I...