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2SD2118 - Low Power Transistor

Key Features

  • Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free.
  • Excellent DC current gain characteristics.
  • Complements the 2SB1412. Production specification 2SD2118 TO-252.

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Low VCE(sat) Transistor (strobe flash) FEATURES  Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free  Excellent DC current gain characteristics.  Complements the 2SB1412. Production specification 2SD2118 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 50 V 20 V VEBO Emitter-Base Voltage 6V IC Collector Current 5A ICP Collector Power Dissipation 10 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W022 Rev.A www.gmesemi.