Galaxy Century Microelectronics 2SD2118
Low Power Transistor
| Part No. | 2SD2118 |
|---|---|
| Datasheet | 2SD2118 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Low Power Transistor |
| Buy | Stock & Price |
FEATURES
● Low VCE(sat) VCE(sat)=0.25V(Typ). (IC/IB-4A/0.1A) Pb Lead-free● Excellent DC current gain characteristics.
● Complements the 2SB1412. Production specification 2SD2118 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 50 V 20 V VEBO Emitter-Base Voltage 6V IC Collector Current 5A ICP Collector Power Dissipation 10 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ W022 Rev.A 1 Production specification Low VCE(sat) Transistor (strobe flash) 2SD2118
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP Collector-base breakdown voltage VCBO IC=50uA,IE=0 50 MAX UNIT Collector-emitter breakdown voltage VCEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage
