Micro Commercial Components 2SD2118
NPN Silicon Plastic-Encapsulate Transistor
FEATURES
● Excellent DC Current Gain Characteristics.● Low VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A)
● Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon Plastic-Encapsulate RoHS Compliant. See ordering information)
● Epoxy meets UL 94 V-0 flammability rating
● Moisture Sensitivity Level 1 Transistor
MAXIMUM RATINGS
TO -251 Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 20 V VCBO Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current 5.0 A PD Power Dissipation TJ Operating Junction Temperature TSTG Storage Temperature 1.0 -55 to +150 -55 to +150 W к кELECTRICAL CHARACTERISTICS
@ 25OC Unless Otherwise Specified 12 3 Symbol Parameter OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO Collector-Emitter Breakdown Voltage* (IC=1mAdc, IB=0) Collector-Base Breakdown Voltage (IC=50uAdc, IE=0) Emitter-Base Breakdown Voltage (IE=50uAdc, IC=0) Min Max Units 20 --- Vdc 50 --- Vdc 6.0 --- Vdc ICBO IEBO hFE1 Collector Cutoff Current (VCB=4...