Datasheet Details
| Part number | 2SD2112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.50 KB |
| Description | Power Transistor |
| Download | 2SD2112 Download (PDF) |
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| Part number | 2SD2112 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 197.50 KB |
| Description | Power Transistor |
| Download | 2SD2112 Download (PDF) |
|
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|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12 A 25 W 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2112 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;
isc Silicon NPN Darlington Power Transistor.
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