Datasheet Details
| Part number | 2SD2524 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.02 KB |
| Description | Power Transistor |
| Download | 2SD2524 Download (PDF) |
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| Part number | 2SD2524 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.02 KB |
| Description | Power Transistor |
| Download | 2SD2524 Download (PDF) |
|
|
|
·High Breakdown Voltage- ：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 20 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 5 A 100 W 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2524 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA ;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A;
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