Datasheet Details
| Part number | 2SD2583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.02 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD2583 Download (PDF) |
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| Part number | 2SD2583 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 207.02 KB |
| Description | Silicon NPN Power Transistor |
| Download | 2SD2583 Download (PDF) |
|
|
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·High Collector Current-IC= 5A ·Low Saturation Voltage - : VCE(sat)= 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain- : hFE= 150~600@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5.0 A ICP Collector Current-Pulse 10 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.0 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2583 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A;
IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A;
isc Silicon NPN Power Transistor.
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