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3DA77 - Silicon NPN Power Transistor

General Description

High DC Current Gain : hFE= 10(MAX)@IC= 1.5A Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 10(MAX)@IC= 1.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 70 V VEBO Emitter-Base Voltage 1 V IC Collector Current-Continuous 5.0 A PC Collector Power Dissipation@TC=75℃ 40 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -55-175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W 3DA77 isc website：www.iscsemi.