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3DD155 - Silicon NPN Power Transistor

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Part number 3DD155
Manufacturer Inchange Semiconductor
File Size 256.38 KB
Description Silicon NPN Power Transistor
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DC Current Gain : hFE= 15-120@IC= 1A Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE A 80 B 150 VCBO Collector-Base Voltage C 200 D 250 E 350 F 400 A 50 B 100 VCEO Collector-Emitter Voltage C 150

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