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3DD155 Datasheet Silicon NPN Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistor.

General Description

·DC Current Gain : hFE= 15-120@IC= 1A ·Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE A 80 B 150 VCBO Collector-Base Voltage C 200 D 250 E 350 F 400 A 50 B 100 VCEO Collector-Emitter Voltage C 150 D 200 E 250 F 300 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 2 PC Collector Power Dissipation @TC=75℃ 20 TJ Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.0 UNIT ℃/W 3DD155 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors 3DD155 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA;

IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA;

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