BD107 transistor equivalent, silicon npn power transistor.
*Designed for driver and output stages and high Power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 65V(Min)
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for driver and output stages and high Power switching
ABSOLUTE MAXIMUM.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 206.62KB)