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Inchange Semiconductor

BD234 Datasheet Preview

BD234 Datasheet

Silicon PNP Power Transistor

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isc Silicon PNP Power Transistor
INCHANGE Semiconductor
BD234/236/238
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A
·Complement to Type BD233/235/237
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in 5~10 watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
BD234
-45
VCBO
Collector-Base Voltage BD236
-60
V
BD238
-100
BD234
-45
VCEO
Collector-Emitter Voltage BD236
-60
V
BD238
-80
VCER
Collector-Emitter
Voltage(RBE= 1kΩ)
BD234
-45
BD236
-60
V
BD238
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
25
W
150
-65~150
isc websitewww.iscsemi.com
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Inchange Semiconductor

BD234 Datasheet Preview

BD234 Datasheet

Silicon PNP Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD234/236/238
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX
5
100
UNIT
/W
/W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD234
-45
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD236 IC= -50mA ; IB= 0
-60
V
BD238
-80
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB= -0.1A
-0.6 V
VBE(on)
ICBO
IEBO
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC= -1.0A; VCE= -2V
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0; TJ= 150
VEB= -5V; IC= 0
-1.3 V
-0.05
-1.0
mA
-0.2 mA
hFE-1
DC Current Gain
IC= -150mA ; VCE= -2V
40
250
hFE-2
DC Current Gain
IC= -1.0A ; VCE= -2V
25
fT
Current-Gain—Bandwidth Product IC= -250mA;VCE=-10V,ftest= 1.0MHz 3.0
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
0.3
μs
0.7
μs
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BD234
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
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