INCHANGE Semiconductor
isc Silicon PNP Power Transistor
BD234/236/238
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX
5
100
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD234
-45
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BD236 IC= -50mA ; IB= 0
-60
V
BD238
-80
VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB= -0.1A
-0.6 V
VBE(on)
ICBO
IEBO
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC= -1.0A; VCE= -2V
VCB= VCBOmax; IE= 0
VCB= VCBOmax; IE= 0; TJ= 150℃
VEB= -5V; IC= 0
-1.3 V
-0.05
-1.0
mA
-0.2 mA
hFE-1
DC Current Gain
IC= -150mA ; VCE= -2V
40
250
hFE-2
DC Current Gain
IC= -1.0A ; VCE= -2V
25
fT
Current-Gain—Bandwidth Product IC= -250mA;VCE=-10V,ftest= 1.0MHz 3.0
MHz
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
0.3
μs
0.7
μs
NOTICE：
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
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