Datasheet Details
| Part number | BD236 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.74 KB |
| Description | Silicon PNP Power Transistor |
| Download | BD236 Download (PDF) |
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Download the BD236 datasheet PDF. This datasheet also includes the BD238 variant, as both parts are published together in a single manufacturer document.
| Part number | BD236 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.74 KB |
| Description | Silicon PNP Power Transistor |
| Download | BD236 Download (PDF) |
|
|
|
·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD233/235/237 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD234 -45 VCBO Collector-Base Voltage BD236 -60 V BD238 -100 BD234 -45 VCEO Collector-Emitter Voltage BD236 -60 V BD238 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD234 -45 BD236 -60 V BD238 -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -0.5 A 25 W 150 ℃ -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor BD234/236/238 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 5 100 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT BD234 -45 VCEO(SUS) Collector-Emitter Sustaining Voltage BD236 IC= -50mA ;
isc Silicon PNP Power Transistor INCHANGE Semiconductor BD234/236/238.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD236 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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BD236 | PNP Transistor | Fairchild Semiconductor |
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BD236 | Silicon PNP Transistor | Toshiba |
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BD236 | EPITAXIAL SILICON POWER TRANSISTORS | CDIL |
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BD236 | SILICON PNP POWER TRANSISTORS | Central Semiconductor |
| Part Number | Description |
|---|---|
| BD233 | Silicon NPN Power Transistors |
| BD234 | Silicon PNP Power Transistor |
| BD235 | Silicon NPN Power Transistors |
| BD237 | Silicon NPN Power Transistors |
| BD238 | Silicon PNP Power Transistor |
| BD201 | Silicon NPN Power Transistor |
| BD202 | Silicon PNP Power Transistor |
| BD203 | Silicon NPN Power Transistor |
| BD204 | Silicon PNP Power Transistor |
| BD243 | Silicon NPN Power Transistor |