Datasheet Summary
isc Silicon PNP Power Transistor
DESCRIPTION
- DC Current Gain
- : hFE = 40(Min.)@ IC= -25mA
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.)
- plement to Type BD637
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for amplifier and switching...
