Download BD638 Datasheet PDF
Inchange Semiconductor
BD638
DESCRIPTION - DC Current Gain - : h FE = 40(Min.)@ IC= -25m A - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) - plement to Type BD637 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 Collector Current-Continuous -2 Collector Current-Peak -5 Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ Junction Temperature -0.3...