Datasheet Details
| Part number | BD634 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.53 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD634-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor BD634.
| Part number | BD634 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 191.53 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | BD634-InchangeSemiconductor.pdf |
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·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.) ·Complement to Type BD633 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.3 A 2 W 30 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA;
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