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BD638 - Silicon PNP Power Transistor

General Description

DC Current Gain - : hFE = 40(Min.)@ IC= -25mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) Complement to Type BD637 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching application

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= -25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) ·Complement to Type BD637 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -5 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.