BD637 Description
hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·plement to Type BD638 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...