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BD637

Manufacturer: Inchange Semiconductor
BD637 datasheet preview

Datasheet Details

Part number BD637
Datasheet BD637_InchangeSemiconductor.pdf
File Size 189.23 KB
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
BD637 page 2

BD637 Overview

hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) ·plement to Type BD638 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter...

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