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BD637 - Silicon NPN Power Transistor

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Datasheet Details

Part number BD637
Manufacturer Inchange Semiconductor
File Size 189.23 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BD637 Datasheet
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Description

DC Current Gain - : hFE = 40(Min.)@ IC= 25mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) Complement to Type BD638 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier and switching applications.

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