Part BD637
Description Silicon NPN Power Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 189.23 KB
Inchange Semiconductor
BD637

Overview

DC Current Gain - : hFE = 40(Min.)@ IC= 25mA Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) Complement to Type BD638 Minimum Lot-to-Lot variations for robust device performance and reliable operation.