Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- DC Current Gain
- : hFE = 40(Min.)@ IC= 25mA
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min.)
- plement to Type BD638
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for amplifier and switching...
