BD909 transistors equivalent, silicon npn power transistors.
*Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
.
*DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
*Complement to Type BD910
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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