DC Current Gain -
: hFE = 40(Min.)@ IC= 0.5A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 80V(Min)
Complement to Type BD910
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use in general purpose power amplif
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BD909. For precise diagrams, and layout, please refer to the original PDF.
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Typ...
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r-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Complement to Type BD910 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
BD909 Datasheet
