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Inchange Semiconductor

BDX14A Datasheet Preview

BDX14A Datasheet

Silicon PNP Power Transistor

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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
DESCRIPTION
·Continuous Collector Current-IC= -4A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Min.)
APPLICATIONS
·Designed for LF Large Signal Power Amplification
and Medium Current Switching
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-90 V
VCER
Collector-Emitter Voltage RBE= 100Ω
-60
V
VCEO
Collector-Emitter Voltage
-55 V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-4 A
IB Base Current-Continuous
-2 A
PC Collector Power Dissipation@TC=2529
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
6.0 /W
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

BDX14A Datasheet Preview

BDX14A Datasheet

Silicon PNP Power Transistor

No Preview Available !

INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
BDX14A
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
VCER(SUS) Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
ICEX Collector Cutoff Current
hFE DC Current Gain
IC= -0.5A; VCE= -4V
VCE= -90V; VBE= 1.5V
VCE= -30V; VBE= 1.5V,TC=150
IC= -0.5A; VCE= -4V
fT Current Gain-Bandwidth Product IC= -0.2A; VCE= -10V
MIN MAX UNIT
-55 V
-60 V
-7 V
-1.0 V
-1.7 V
-1.0
-5.0
mA
25 250
4 MHz
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number BDX14A
Description Silicon PNP Power Transistor
Maker Inchange Semiconductor
Total Page 2 Pages
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